LUIS FELIPE
SANZ SANTACRUZ
Investigador en el període 1985-2008
JUAN IGNACIO
JIMENEZ LOPEZ
PROFESOR EMERITO
Publicacions en què col·labora amb JUAN IGNACIO JIMENEZ LOPEZ (26)
2009
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Spectral image cathodoluminescence, photoluminescence and Raman study of GaAs layers grown on Si substrates
Superlattices and Microstructures, Vol. 45, Núm. 4-5, pp. 214-221
2008
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A study of conformal GaAs on Si layers by micro-Raman and spectral imaging cathodoluminescence
Materials Research Society Symposium Proceedings
2007
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Stress distribution mapping of GaAs on Si conformal layers
Journal of Applied Physics, Vol. 101, Núm. 5
2006
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The properties of GalnP/GaAs heterostructures as a function of growth temperature
Journal De Physique. IV : JP
2005
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Microscopic optical interferometry study of the cottrell atmospheres in Si-Doped GaAs
Recent Advances in Multidisciplinary Applied Physics (Elsevier Ltd), pp. 217-221
2004
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Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures
EPJ Applied Physics
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Porous SiGe nanostructures formed by electrochemical etching of thin Poly-SiGe films
Journal of the Electrochemical Society, Vol. 151, Núm. 5
2003
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Study of doping in GaAs layers by local probe techniques: Micro-Raman, micro-photoluminescence and cathodoluminescence
Materials Research Society Symposium - Proceedings
2002
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Analysis of the white emission from ion beam synthesised layers by in-depth resolved scanning photoluminescence microscopy
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Optical and structural characterization of LP MOVPE grown lattice matched InGaP/GaAs heterostructures
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Raman and photoluminescence mapping of lattice matched InGaP/GaAs heterostructures
Materials Research Society Symposium - Proceedings, Vol. 692, pp. 91-96
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Study of defects in conformal GaAs/Si layers by optical techniques and photoetching
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
1999
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Study of the dislocations in Si-doped GaAs comparing diluted Sirtl light etching, electron-beam-induced current, and micro-Raman techniques
Journal of Materials Research, Vol. 14, Núm. 5, pp. 1732-1743
1998
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MicroRaman and phase stepping microscopy analysis of growth defects in GaAs/GaAs epilayers
Materials Science and Technology, Vol. 14, Núm. 12, pp. 1286-1290
1997
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Homogeneity of Fe-DOPED InP wafers using optical microprobes
Materials Science Forum, Vol. 258-263, Núm. PART 2, pp. 825-830
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Phase stepping microscopy for layer thickness measurement in silicon-on-insulator structures
Thin Solid Films, Vol. 311, Núm. 1-2, pp. 225-229
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Study of the homogeneity of Fe-doped semiinsulating InP wafers
Materials Research Society Symposium - Proceedings
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Temperature dependence of the photoquenching of EL2 in semi-insulating GaAs
Applied Physics Letters, Vol. 70, Núm. 23, pp. 3131-3133
1996
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Laser melting and recrystallization of bulk Si by nanosecond UV laser pulses
Materials Research Society Symposium - Proceedings
1995
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MicroRaman study of laser ablated GaAs
Materials Research Society Symposium - Proceedings