Publications dans lesquelles il/elle collabore avec JUAN IGNACIO JIMENEZ LOPEZ (26)

2009

  1. Spectral image cathodoluminescence, photoluminescence and Raman study of GaAs layers grown on Si substrates

    Superlattices and Microstructures, Vol. 45, Núm. 4-5, pp. 214-221

2008

  1. A study of conformal GaAs on Si layers by micro-Raman and spectral imaging cathodoluminescence

    Materials Research Society Symposium Proceedings

2007

  1. Stress distribution mapping of GaAs on Si conformal layers

    Journal of Applied Physics, Vol. 101, Núm. 5

2006

  1. The properties of GalnP/GaAs heterostructures as a function of growth temperature

    Journal De Physique. IV : JP

2005

  1. Microscopic optical interferometry study of the cottrell atmospheres in Si-Doped GaAs

    Recent Advances in Multidisciplinary Applied Physics (Elsevier Ltd), pp. 217-221

2004

  1. Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures

    EPJ Applied Physics

  2. Porous SiGe nanostructures formed by electrochemical etching of thin Poly-SiGe films

    Journal of the Electrochemical Society, Vol. 151, Núm. 5

2003

  1. Study of doping in GaAs layers by local probe techniques: Micro-Raman, micro-photoluminescence and cathodoluminescence

    Materials Research Society Symposium - Proceedings

2002

  1. Analysis of the white emission from ion beam synthesised layers by in-depth resolved scanning photoluminescence microscopy

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Optical and structural characterization of LP MOVPE grown lattice matched InGaP/GaAs heterostructures

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Raman and photoluminescence mapping of lattice matched InGaP/GaAs heterostructures

    Materials Research Society Symposium - Proceedings, Vol. 692, pp. 91-96

  4. Study of defects in conformal GaAs/Si layers by optical techniques and photoetching

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

1999

  1. Study of the dislocations in Si-doped GaAs comparing diluted Sirtl light etching, electron-beam-induced current, and micro-Raman techniques

    Journal of Materials Research, Vol. 14, Núm. 5, pp. 1732-1743

1998

  1. MicroRaman and phase stepping microscopy analysis of growth defects in GaAs/GaAs epilayers

    Materials Science and Technology, Vol. 14, Núm. 12, pp. 1286-1290

1997

  1. Homogeneity of Fe-DOPED InP wafers using optical microprobes

    Materials Science Forum, Vol. 258-263, Núm. PART 2, pp. 825-830

  2. Phase stepping microscopy for layer thickness measurement in silicon-on-insulator structures

    Thin Solid Films, Vol. 311, Núm. 1-2, pp. 225-229

  3. Study of the homogeneity of Fe-doped semiinsulating InP wafers

    Materials Research Society Symposium - Proceedings

  4. Temperature dependence of the photoquenching of EL2 in semi-insulating GaAs

    Applied Physics Letters, Vol. 70, Núm. 23, pp. 3131-3133

1996

  1. Laser melting and recrystallization of bulk Si by nanosecond UV laser pulses

    Materials Research Society Symposium - Proceedings

1995

  1. MicroRaman study of laser ablated GaAs

    Materials Research Society Symposium - Proceedings