PEDRO
CASTRILLO ROMON
Chercheur dans le période 1993-2013
JUAN JOSE
BARBOLLA SANCHO
Chercheur dans le période 1983-2005
Publications dans lesquelles il/elle collabore avec JUAN JOSE BARBOLLA SANCHO (19)
2005
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Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators
Journal of Applied Physics, Vol. 98, Núm. 5
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Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population
Journal of Applied Physics, Vol. 98, Núm. 4
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Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach
Applied Physics Letters, Vol. 86, Núm. 25, pp. 1-3
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Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial
Physical Review B - Condensed Matter and Materials Physics, Vol. 71, Núm. 8
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Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon
Physical Review B - Condensed Matter and Materials Physics, Vol. 72, Núm. 3
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Physically based modeling of dislocation loops in ion implantation processing in silicon
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2004
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A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Comprehensive, physically based modelling of As in Si
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features
Applied Physics Letters, Vol. 84, Núm. 24, pp. 4962-4964
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Physical modeling of Fermi-level effects for decanano device process simulations
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2003
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Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena
Physical Review B - Condensed Matter and Materials Physics, Vol. 68, Núm. 19
2002
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Carbon in silicon: Modeling of diffusion and clustering mechanisms
Journal of Applied Physics, Vol. 92, Núm. 3, pp. 1582-1587
2000
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Atomistic modeling of complex silicon processing scenarios
Materials Research Society Symposium - Proceedings
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Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data
Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63
1997
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Optical phonons of strained GaAs/GaP quantum wells studied by Raman spectroscopy
Applied Physics Letters, Vol. 71, Núm. 10, pp. 1353-1355
1996
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Consequences of interface corrugation on the lattice dynamics and raman spectra in high-index AlAs/GaAs superlattices
Solid-State Electronics, Vol. 40, Núm. 1-8, pp. 175-180
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Raman response of (11N)-oriented GaAs/AlAs superlattices within the framework of the bond polarizability model
Solid State Communications, Vol. 98, Núm. 4, pp. 307-311