Bruno
Gérard
Publicaciones en las que colabora con Bruno Gérard (21)
2013
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Direct atomic imaging of antiphase boundaries and orthotwins in orientation-patterned GaAs
Applied Physics Letters, Vol. 102, Núm. 8
2012
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Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, Núm. 7, pp. 1651-1654
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Planar defects in patterned GaAs by aberration corrected STEM
Microscopy and Microanalysis, Vol. 18, pp. 338-339
2010
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Counterdirectional mode coupling in ring resonators with QPM nonlinear crystals and effects on the characteristics of cw optical parametric oscillation
Applied Physics B: Lasers and Optics, Vol. 100, Núm. 4, pp. 737-747
2009
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Spectral image cathodoluminescence, photoluminescence and Raman study of GaAs layers grown on Si substrates
Superlattices and Microstructures, Vol. 45, Núm. 4-5, pp. 214-221
2008
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A study of conformal GaAs on Si layers by micro-Raman and spectral imaging cathodoluminescence
Materials Research Society Symposium Proceedings
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Distribution of point defects in orientation-patterned GaAs crystals: A cathodoluminescence study
Applied Physics Letters, Vol. 93, Núm. 15
2004
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Cathodoluminescence study of Si complex formation in self-doped and intentionally Si-doped GaAs conformal layers
Journal of Physics Condensed Matter
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Optical properties of epitaxial lateral overgrowth GaN structures studied by Raman and cathodoluminescence spectroscopies
Journal of Applied Physics, Vol. 96, Núm. 7, pp. 3639-3644
2003
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Cathodoluminescence and microRaman study of GaN ELO structures
Materials Research Society Symposium - Proceedings
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Study of doping in GaAs layers by local probe techniques: Micro-Raman, micro-photoluminescence and cathodoluminescence
Materials Research Society Symposium - Proceedings
2002
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Doping profiles of n-type GaAs layers grown on Si by the conformal method
Materials Research Society Symposium - Proceedings, Vol. 692, pp. 417-422
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Optical characterization of GaAs/Si layers grown by the conformal method (confined lateral epitaxial growth)
Journal of Materials Research, Vol. 17, Núm. 6, pp. 1341-1349
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Properties of AlGaAs layers grown on Si by the conformal method
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Study of defects in conformal GaAs/Si layers by optical techniques and photoetching
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy
Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5045-5050
2001
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High-quality GaAs-related lateral junctions on Si by conformal growth
Optical Materials
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Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 197-201
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Self-doping near the seed/layer interface in conformal GaAs layers grown on Si
Applied Physics Letters, Vol. 79, Núm. 9, pp. 1270-1272
2000
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Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman
Journal of Crystal Growth, Vol. 210, Núm. 1, pp. 198-202