Publicaciones en colaboración con investigadores/as de University of Helsinki (18)

2018

  1. Tailoring the Structure and Morphology of Low-Molecular-Weight Cellulose Produced during Supercritical Water Hydrolysis

    ACS Sustainable Chemistry and Engineering, Vol. 6, Núm. 12, pp. 16959-16967

2011

  1. Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride

    Physical Review B - Condensed Matter and Materials Physics, Vol. 83, Núm. 8

  2. Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  3. Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

2010

  1. Adduct formed by chromium trioxide and zwitterionic quinolinic acid

    Central European Journal of Chemistry, Vol. 8, Núm. 3, pp. 486-493

2009

  1. Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors

    Microelectronic Engineering, Vol. 86, Núm. 7-9, pp. 1689-1691

  2. Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Electrical characterization of high-k based MIS capacitors using flat-band voltage transients

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  4. Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 389-393

  5. Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 416-420

  6. Study of atomic layer deposited zirconium oxide thin films by using mono-cyclopentadienyl based precursors

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors

    Journal of the Electrochemical Society, Vol. 155, Núm. 11

2007

  1. Electrical properties of atomic-layer-deposited thin gadolinium oxide high- k gate dielectrics

    Journal of the Electrochemical Society, Vol. 154, Núm. 10

  2. Hydrogen storage in ammonia triborane: Properties and behavior of the chemical bonds

    Inorganic Chemistry Communications, Vol. 10, Núm. 10, pp. 1229-1232

  3. Study of atomic layer deposited gadolinium oxide thin films on silicon

    Materials Research Society Symposium Proceedings

2000

  1. Chemical bonding in hypervalent molecules revised. 3. Application of the atoms in molecules theory to Y3X-CH2 (X = N, P, or As; Y = H or F) and H2X-CH2 (X = O, S, or Se) ylides

    Journal of the American Chemical Society, Vol. 122, Núm. 6, pp. 1144-1149

1999

  1. Chemical bonding in hypervalent molecules revised. 2. Application of the atoms in molecules theory to Y2XZ and Y2XZ2 (Y = H, F, CH3; X = O, S, Se; Z = O, S) compounds

    Journal of the American Chemical Society, Vol. 121, Núm. 13, pp. 3156-3164

1998

  1. Chemical bonding in hypervalent molecules revised. Application of the Atoms in Molecules Theory to Y3 X and Y3 XZ (Y = H or CH3; X = N, P or As; Z = O or S) compounds

    Journal of the American Chemical Society, Vol. 120, Núm. 33, pp. 8461-8471