Publicaciones en las que colabora con Dale C. Jacobson (9)

1999

  1. Boron pileup and clustering in silicon-on-insulator films

    Applied Physics Letters, Vol. 75, Núm. 8, pp. 1083-1085

  2. Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

    Applied Physics Letters, Vol. 74, Núm. 9, pp. 1299-1301

1998

  1. Boron-enhanced-diffusion of boron from ultra-low-energy boron implantation

    SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2

  2. Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

    Materials Science and Engineering A, Vol. 253, Núm. 1-2, pp. 269-274

  3. Damage, defects and diffusion from ultra-low energy (0-5 keV) ion implantation of silicon

    Materials Science in Semiconductor Processing, Vol. 1, Núm. 1, pp. 17-25

  4. Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model

    Journal of Applied Physics, Vol. 83, Núm. 11, pp. 6182-6184

1997

  1. Boron-Enhanced-Diffusion of boron: The limiting factor for ultra-shallow junctions

    Technical Digest - International Electron Devices Meeting, IEDM

  2. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

    Journal of Applied Physics, Vol. 81, Núm. 9, pp. 6031-6050

  3. Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials

    Applied Physics Letters, Vol. 71, Núm. 21, pp. 3141-3143