Publicaciones (34) Publicaciones en las que ha participado algún/a investigador/a

2008

  1. A 1-GHz, multibit, continuous-time, delta-sigma ADC for Gigabit Ethernet

    Microelectronics Journal, Vol. 39, Núm. 12, pp. 1642-1648

  2. A User-Friendly CAD Tool for the Rigorous and Efficient Analysis of Planar Waveguiding Structures for Millimetre Applications

    SMO 08: PROCEEDINGS OF THE 8TH WSEAS INTERNATIONAL CONFERENCE ON SIMULATION, MODELLING AND OPTIMIZATION

  3. An alternating-direction implicit FDTD modeling of dispersive media without constitutive relation splitting

    IEEE Microwave and Wireless Components Letters, Vol. 18, Núm. 11, pp. 719-721

  4. Analysis of frequency division in microstrip circuits by using the FDTD method

    Microwave and Optical Technology Letters, Vol. 50, Núm. 5, pp. 1300-1302

  5. Angular distributions of sputtered atoms from semiconductor targets at grazing ion beam incidence angles

    AIP Conference Proceedings

  6. Application of Schelkunoff's method for simulating isotropic chiral free propagation: Clarifying some common errors

    Journal of Electromagnetic Waves and Applications, Vol. 22, Núm. 5-6, pp. 861-871

  7. Atomistic modeling of FnVm complexes in pre-amorphized Si

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 154-155, Núm. 1-3, pp. 207-210

  8. Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices

    Technical Digest - International Electron Devices Meeting, IEDM

  9. Atomistic simulation and subsequent optimization of boron USJ using pre-amorphization and high ramp rates annealing

    Materials Research Society Symposium Proceedings

  10. Atomistic simulation techniques in front-end processing

    Materials Research Society Symposium Proceedings

  11. Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors

    Journal of the Electrochemical Society, Vol. 155, Núm. 11

  12. Comprehensive model of damage accumulation in silicon

    Journal of Applied Physics, Vol. 103, Núm. 1

  13. Design of a 1-V 1-MS/s Track&Hold circuit based on the switched opamp approach

    International Journal of Electronics, Vol. 95, Núm. 1, pp. 57-66

  14. Erratum: Electromagnetic propagation in unbounded inhomogeneous chiral media using the coupled mode method (Microwave Optical Technology Letters (2007) 49 (2771-2779))

    Microwave and Optical Technology Letters

  15. Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 154-155, Núm. 1-3, pp. 247-251

  16. Evolution of fluorine and boron profiles during annealing in crystalline Si

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, Núm. 1, pp. 377-381

  17. F+ implants in crystalline Si: The Si interstitial contribution

    Materials Research Society Symposium Proceedings

  18. First principles study of boron in amorphous silicon

    Materials Research Society Symposium Proceedings

  19. From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon

    Solid-State Electronics, Vol. 52, Núm. 9, pp. 1430-1436

  20. Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices

    Journal of Non-Crystalline Solids, Vol. 354, Núm. 2-9, pp. 393-398