Electricidad y Electrónica

2008

1. A 1-GHz, multibit, continuous-time, delta-sigma ADC for Gigabit Ethernet

   Microelectronics Journal, Vol. 39, Núm. 12, pp. 1642-1648

2. An alternating-direction implicit FDTD modeling of dispersive media without constitutive relation splitting

   IEEE Microwave and Wireless Components Letters, Vol. 18, Núm. 11, pp. 719-721

3. Analysis of frequency division in microstrip circuits by using the FDTD method

   Microwave and Optical Technology Letters, Vol. 50, Núm. 5, pp. 1300-1302

4. Application of Schelkunoff's method for simulating isotropic chiral free propagation: Clarifying some common errors

   Journal of Electromagnetic Waves and Applications, Vol. 22, Núm. 5-6, pp. 861-871

5. Atomistic modeling of FnVm complexes in pre-amorphized Si

   Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 154-155, Núm. 1-3, pp. 207-210

6. Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors

   Journal of the Electrochemical Society, Vol. 155, Núm. 11

7. Comprehensive model of damage accumulation in silicon

   Journal of Applied Physics, Vol. 103, Núm. 1

8. Design of a 1-V 1-MS/s Track&Hold circuit based on the switched opamp approach

   International Journal of Electronics, Vol. 95, Núm. 1, pp. 57-66

9. Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects

   Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 154-155, Núm. 1-3, pp. 247-251

10. Evolution of fluorine and boron profiles during annealing in crystalline Si

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, Núm. 1, pp. 377-381

11. From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon

    Solid-State Electronics, Vol. 52, Núm. 9, pp. 1430-1436

12. Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices

    Journal of Non-Crystalline Solids, Vol. 354, Núm. 2-9, pp. 393-398

13. Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

    Journal of Applied Physics, Vol. 104, Núm. 9

14. Long and double hop kinetic Monte Carlo: Techniques to speed up atomistic modeling without losing accuracy

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 154-155, Núm. 1-3, pp. 202-206

15. Resonant domain wall depinning induced by oscillating spin-polarized currents in thin ferromagnetic strips

    Physical Review B - Condensed Matter and Materials Physics, Vol. 77, Núm. 14

16. Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films

    Journal of Non-Crystalline Solids, Vol. 354, Núm. 2-9, pp. 404-408

17. Si interstitial contribution of F+ implants in crystalline Si

    Journal of Applied Physics, Vol. 103, Núm. 9

18. Stability and accuracy of a finite-difference time-domain scheme for modeling double-negative media with high-order rational constitutive parameters

    IEEE Transactions on Microwave Theory and Techniques, Vol. 56, Núm. 1, pp. 94-104

19. Structural transformations from point to extended defects in silicon: A molecular dynamics study

    Physical Review B - Condensed Matter and Materials Physics, Vol. 78, Núm. 19

20. Synthesis, physical, magnetic and electrical properties of Al-Ga substituted co-precipitated nanocrystalline strontium hexaferrite

    Journal of Magnetism and Magnetic Materials, Vol. 320, Núm. 6, pp. 881-886