Department
Electricity and Electronics
Publications (34) Publications in which a researcher has participated
2008
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A 1-GHz, multibit, continuous-time, delta-sigma ADC for Gigabit Ethernet
Microelectronics Journal, Vol. 39, Núm. 12, pp. 1642-1648
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A User-Friendly CAD Tool for the Rigorous and Efficient Analysis of Planar Waveguiding Structures for Millimetre Applications
SMO 08: PROCEEDINGS OF THE 8TH WSEAS INTERNATIONAL CONFERENCE ON SIMULATION, MODELLING AND OPTIMIZATION
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An alternating-direction implicit FDTD modeling of dispersive media without constitutive relation splitting
IEEE Microwave and Wireless Components Letters, Vol. 18, Núm. 11, pp. 719-721
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Analysis of frequency division in microstrip circuits by using the FDTD method
Microwave and Optical Technology Letters, Vol. 50, Núm. 5, pp. 1300-1302
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Angular distributions of sputtered atoms from semiconductor targets at grazing ion beam incidence angles
AIP Conference Proceedings
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Application of Schelkunoff's method for simulating isotropic chiral free propagation: Clarifying some common errors
Journal of Electromagnetic Waves and Applications, Vol. 22, Núm. 5-6, pp. 861-871
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Atomistic modeling of FnVm complexes in pre-amorphized Si
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 154-155, Núm. 1-3, pp. 207-210
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Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
Technical Digest - International Electron Devices Meeting, IEDM
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Atomistic simulation and subsequent optimization of boron USJ using pre-amorphization and high ramp rates annealing
Materials Research Society Symposium Proceedings
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Atomistic simulation techniques in front-end processing
Materials Research Society Symposium Proceedings
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Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors
Journal of the Electrochemical Society, Vol. 155, Núm. 11
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Comprehensive model of damage accumulation in silicon
Journal of Applied Physics, Vol. 103, Núm. 1
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Design of a 1-V 1-MS/s Track&Hold circuit based on the switched opamp approach
International Journal of Electronics, Vol. 95, Núm. 1, pp. 57-66
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Erratum: Electromagnetic propagation in unbounded inhomogeneous chiral media using the coupled mode method (Microwave Optical Technology Letters (2007) 49 (2771-2779))
Microwave and Optical Technology Letters
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Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 154-155, Núm. 1-3, pp. 247-251
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Evolution of fluorine and boron profiles during annealing in crystalline Si
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, Núm. 1, pp. 377-381
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F+ implants in crystalline Si: The Si interstitial contribution
Materials Research Society Symposium Proceedings
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First principles study of boron in amorphous silicon
Materials Research Society Symposium Proceedings
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From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon
Solid-State Electronics, Vol. 52, Núm. 9, pp. 1430-1436
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Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices
Journal of Non-Crystalline Solids, Vol. 354, Núm. 2-9, pp. 393-398