Publicaciones en las que colabora con IGNACIO MARTIN BRAGADO (19)

2006

  1. Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth

    Materials Research Society Symposium Proceedings

  2. Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 253, Núm. 1-2, pp. 63-67

2005

  1. Bimodal distribution of damage morphology generated by ion implantation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Comprehensive modeling of ion-implant amorphization in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  4. Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

    Journal of Applied Physics, Vol. 98, Núm. 5

  5. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

    Journal of Applied Physics, Vol. 98, Núm. 4

  6. Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  7. Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

    Applied Physics Letters, Vol. 86, Núm. 25, pp. 1-3

  8. Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

    Physical Review B - Condensed Matter and Materials Physics, Vol. 72, Núm. 3

  9. Physically based modeling of dislocation loops in ion implantation processing in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2004

  1. A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Comprehensive, physically based modelling of As in Si

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

    Applied Physics Letters, Vol. 84, Núm. 24, pp. 4962-4964

  4. Physical modeling of Fermi-level effects for decanano device process simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  5. Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2003

  1. Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films

    Journal of Applied Physics, Vol. 94, Núm. 1, pp. 163-168

  2. Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena

    Physical Review B - Condensed Matter and Materials Physics, Vol. 68, Núm. 19

2002

  1. Carbon in silicon: Modeling of diffusion and clustering mechanisms

    Journal of Applied Physics, Vol. 92, Núm. 3, pp. 1582-1587