Publicacións (74) Publicacións de IVAN SANTOS TEJIDO

2022

  1. Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 512, pp. 42-48

  2. Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit

    Applied Physics Letters, Vol. 121, Núm. 5

  3. Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 512, pp. 54-59

  4. Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study

    Acta Materialia, Vol. 241

2021

  1. Achieving junction stability in heavily doped epitaxial Si:P

    Materials Science in Semiconductor Processing, Vol. 127

  2. Atomistic modeling of laser-related phenomena

    Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics (Elsevier), pp. 79-136

2019

  1. Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study

    Journal of Non-Crystalline Solids, Vol. 503-504, pp. 20-27

  2. On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 458, pp. 179-183

  3. {001} loops in silicon unraveled

    Acta Materialia, Vol. 166, pp. 192-201