Publicaciones en las que colabora con JUAN IGNACIO JIMENEZ LOPEZ (25)

2006

  1. The properties of GalnP/GaAs heterostructures as a function of growth temperature

    Journal De Physique. IV : JP

2004

  1. Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures

    EPJ Applied Physics

2003

  1. Optical and morphological characteristics of LP MOVPE grown lattice matched GaInP/GaAs heterostructures

    Physica Status Solidi (A) Applied Research

2002

  1. Characterization of GaN/InGaN hetero-structures by SEM and CL

    IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

2001

  1. Metastable crystalline state induced in amorphous SiGe layers under cw visible laser illumination

    Thin Solid Films, Vol. 383, Núm. 1-2, pp. 227-229

  2. MicroRaman study of bulk inclusions in SiC crystals

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 366-369

  3. Raman scattering from LO phonon-plasmon coupled modes and Hall-effect in n-type silicon carbide 4H-SiC

    Journal of Applied Physics, Vol. 90, Núm. 10, pp. 5211-5215

2000

  1. MicroRaman and Hall effect study of n-type bulk 4H-SiC

    Materials Science Forum, Vol. 338

1999

  1. Passivation of the Facets of 980 nm GaAs Pump Lasers by a Pulsed UV Laser-Assisted Technique

    Journal of Electronic Materials, Vol. 28, Núm. 2, pp. 83-90

1998

  1. MicroRaman study of crystallographic defects in SiC crystals

    Solid-State Electronics, Vol. 42, Núm. 12, pp. 2309-2314

  2. Temperature dependence of the Raman spectrum of ternary alloys

    Physical Review B - Condensed Matter and Materials Physics, Vol. 58, Núm. 16, pp. 10463-10469

1997

  1. MicroRaman characterization of microdefects in bulk SiC

    Materials Research Society Symposium - Proceedings

  2. Phase stepping microscopy for layer thickness measurement in silicon-on-insulator structures

    Thin Solid Films, Vol. 311, Núm. 1-2, pp. 225-229

  3. Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures

    Journal of Applied Physics, Vol. 82, Núm. 8, pp. 3730-3735

1995

  1. Raman microprobe analysis of patterned high Tc superconductor (YBCO) thin films

    Materials Research Bulletin, Vol. 30, Núm. 6, pp. 771-778

1994

  1. MicroRaman analysis of twin lamellae in undoped LEC InP

    Journal of Materials Science: Materials in Electronics, Vol. 5, Núm. 6, pp. 315-320

  2. Optical characterisation of SIMOX structures formed by successive implantation and annealing

    Nuclear Inst. and Methods in Physics Research, B, Vol. 84, Núm. 2, pp. 275-280

1993

  1. Raman characterization of GaAs doped with Sn by laser assisted diffusion

    Materials Science and Engineering B, Vol. 20, Núm. 1-2, pp. 144-147

  2. Raman microprobe: a diagnostic tool for processed silicon. Analysis of microindented silicon

    Journal of Materials Science: Materials in Electronics, Vol. 4, Núm. 4, pp. 271-277

1992

  1. In depth resolved analysis of SIMOX materials by optical characterization techniques

    1991 IEEE International SOI Conference Proceedings