Publicacións nas que colabora con Hans Joachim L. Gossmann (16)

2002

  1. Carbon in silicon: Modeling of diffusion and clustering mechanisms

    Journal of Applied Physics, Vol. 92, Núm. 3, pp. 1582-1587

1999

  1. Activation and deactivation of implanted B in Si

    Applied Physics Letters, Vol. 75, Núm. 5, pp. 662-664

  2. Atomistic simulations of ion implantation and diffusion

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. B cluster formation and dissolution in Si: A scenario based on atomistic modeling

    Applied Physics Letters, Vol. 74, Núm. 24, pp. 3657-3659

  4. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

    Applied Physics Letters, Vol. 74, Núm. 14, pp. 2017-2019

1997

  1. Atomistic model of transient enhanced diffusion and clustering of boron in silicon

    Materials Research Society Symposium - Proceedings

  2. B diffusion and clustering in ion implanted Si: The role of B cluster precursors

    Applied Physics Letters, Vol. 70, Núm. 17, pp. 2285-2287

  3. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

    Journal of Applied Physics, Vol. 81, Núm. 9, pp. 6031-6050

1996

  1. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, Vol. 68, Núm. 17, pp. 2395-2397

1995

  1. Ion implantation and transient enhanced diffusion

    Technical Digest - International Electron Devices Meeting

  2. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, pp. 2395