Publikationen, an denen er mitarbeitet LUIS ALBERTO BAILON VEGA (35)

2005

  1. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Study of the amorphous phase of silicon using molecular dynamics simulation techniques

    2005 Spanish Conference on Electron Devices, Proceedings

2003

  1. Monte Carlo modeling of amorphization resulting from ion implantation in Si

    Computational Materials Science

  2. Statistical 3D damage accumulation model for ion implant simulators

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

2002

  1. Improved binary collision approximation ion implant simulators

    Journal of Applied Physics, Vol. 91, Núm. 2, pp. 658-667

2001

  1. Algorithm for statistical noise reduction in three-dimensional ion implant simulations

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 174, Núm. 4, pp. 433-438

2000

  1. Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data

    Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63

1999

  1. Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

    Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860

  2. Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

    Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980

1998

  1. Monte Carlo atomistic simulation of polycrystalline aluminum deposition

    Materials Research Society Symposium - Proceedings

1997

  1. Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation

    Journal of Applied Physics, Vol. 81, Núm. 3, pp. 1488-1494

  2. Molecular dynamics simulations of ion bombardment processes

    Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896

  3. New methodology for designing floating ring termination technique in high voltage structure

    Materials Research Society Symposium - Proceedings

  4. Numerical study of avalanche breakdown of 6H-SiC planar p-n junctions

    Diamond and Related Materials, Vol. 6, Núm. 10, pp. 1500-1503

1996

  1. Avalanche breakdown of high-voltage p-n junctions of SiC

    Microelectronics Journal, Vol. 27, Núm. 1, pp. 43-51

  2. Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions

    Journal of Applied Physics, Vol. 79, Núm. 1, pp. 310-315

1995

  1. Design of vertical power MOSFETs in SiC

    Proceedings of the International Conference on Microelectronics

  2. Low energy ion implantation simulation using a modified binary collision approximation code

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 228-231

  3. Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 301-304

1994

  1. On the forward conduction mechanisms in SiC P-N junctions

    Materials Research Society Symposium - Proceedings