JUAN JOSE
BARBOLLA SANCHO
Researcher in the period 1983-2005
LUIS ALBERTO
MARQUES CUESTA
CATEDRATICOS DE UNIVERSIDAD
Publications by the researcher in collaboration with LUIS ALBERTO MARQUES CUESTA (41)
2005
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A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework
Computational Materials Science
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Amorphous layer depth dependence on implant parameters during Si self-implantation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Atomistic analysis of annealing behavior of amorphous regions
2005 Spanish Conference on Electron Devices, Proceedings
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Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon
Journal of Applied Physics, Vol. 97, Núm. 10
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Atomistic modeling of dopant implantation and annealing in Si: Damage evolution, dopant diffusion and activation
Computational Materials Science
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Atomistic modeling of ion beam induced amorphization in silicon
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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Atomistic simulations in Si processing: Bridging the gap between atoms and experiments
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Boron redistribution in pre-amorphized Si during thermal annealing
2005 Spanish Conference on Electron Devices, Proceedings
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Molecular dynamics characterization of as-implanted damage in silicon
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial
Physical Review B - Condensed Matter and Materials Physics, Vol. 71, Núm. 8
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Morphology of as-implanted damage in silicon: A molecular dynamics study
2005 Spanish Conference on Electron Devices, Proceedings
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Role of silicon interstitials in boron cluster dissolution
Applied Physics Letters, Vol. 86, Núm. 3, pp. 1-3
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Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions
2005 Spanish Conference on Electron Devices, Proceedings
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Study of the amorphous phase of silicon using molecular dynamics simulation techniques
2005 Spanish Conference on Electron Devices, Proceedings
2004
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Atomistic analysis of the ion beam induced defect evolution
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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Atomistic analysis of the role of silicon interstitials in boron cluster dissolution
Materials Research Society Symposium - Proceedings
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Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Atomistic modeling of ion beam induced amorphization in silicon
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers
Materials Research Society Symposium - Proceedings
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Ion-beam-induced amorphization and recrystallization in silicon
Journal of Applied Physics, Vol. 96, Núm. 11, pp. 5947-5976