Publicaciones en las que colabora con JUAN IGNACIO JIMENEZ LOPEZ (26)

2009

  1. Spectral image cathodoluminescence, photoluminescence and Raman study of GaAs layers grown on Si substrates

    Superlattices and Microstructures, Vol. 45, Núm. 4-5, pp. 214-221

2008

  1. A study of conformal GaAs on Si layers by micro-Raman and spectral imaging cathodoluminescence

    Materials Research Society Symposium Proceedings

2007

  1. Stress distribution mapping of GaAs on Si conformal layers

    Journal of Applied Physics, Vol. 101, Núm. 5

2006

  1. The properties of GalnP/GaAs heterostructures as a function of growth temperature

    Journal De Physique. IV : JP

2005

  1. Microscopic optical interferometry study of the cottrell atmospheres in Si-Doped GaAs

    Recent Advances in Multidisciplinary Applied Physics (Elsevier Ltd), pp. 217-221

2004

  1. Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures

    EPJ Applied Physics

  2. Porous SiGe nanostructures formed by electrochemical etching of thin Poly-SiGe films

    Journal of the Electrochemical Society, Vol. 151, Núm. 5

2003

  1. Study of doping in GaAs layers by local probe techniques: Micro-Raman, micro-photoluminescence and cathodoluminescence

    Materials Research Society Symposium - Proceedings

2002

  1. Analysis of the white emission from ion beam synthesised layers by in-depth resolved scanning photoluminescence microscopy

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Optical and structural characterization of LP MOVPE grown lattice matched InGaP/GaAs heterostructures

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Raman and photoluminescence mapping of lattice matched InGaP/GaAs heterostructures

    Materials Research Society Symposium - Proceedings, Vol. 692, pp. 91-96

  4. Study of defects in conformal GaAs/Si layers by optical techniques and photoetching

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

1999

  1. Study of the dislocations in Si-doped GaAs comparing diluted Sirtl light etching, electron-beam-induced current, and micro-Raman techniques

    Journal of Materials Research, Vol. 14, Núm. 5, pp. 1732-1743

1998

  1. MicroRaman and phase stepping microscopy analysis of growth defects in GaAs/GaAs epilayers

    Materials Science and Technology, Vol. 14, Núm. 12, pp. 1286-1290

1997

  1. Homogeneity of Fe-DOPED InP wafers using optical microprobes

    Materials Science Forum, Vol. 258-263, Núm. PART 2, pp. 825-830

  2. Phase stepping microscopy for layer thickness measurement in silicon-on-insulator structures

    Thin Solid Films, Vol. 311, Núm. 1-2, pp. 225-229

  3. Study of the homogeneity of Fe-doped semiinsulating InP wafers

    Materials Research Society Symposium - Proceedings

  4. Temperature dependence of the photoquenching of EL2 in semi-insulating GaAs

    Applied Physics Letters, Vol. 70, Núm. 23, pp. 3131-3133

1996

  1. Laser melting and recrystallization of bulk Si by nanosecond UV laser pulses

    Materials Research Society Symposium - Proceedings

1995

  1. MicroRaman study of laser ablated GaAs

    Materials Research Society Symposium - Proceedings