Publicaciones en las que colabora con JUAN JOSE BARBOLLA SANCHO (19)

2005

  1. Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

    Journal of Applied Physics, Vol. 98, Núm. 5

  3. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

    Journal of Applied Physics, Vol. 98, Núm. 4

  4. Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

    Applied Physics Letters, Vol. 86, Núm. 25, pp. 1-3

  5. Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial

    Physical Review B - Condensed Matter and Materials Physics, Vol. 71, Núm. 8

  6. Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

    Physical Review B - Condensed Matter and Materials Physics, Vol. 72, Núm. 3

  7. Physically based modeling of dislocation loops in ion implantation processing in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2004

  1. A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Comprehensive, physically based modelling of As in Si

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

    Applied Physics Letters, Vol. 84, Núm. 24, pp. 4962-4964

  4. Physical modeling of Fermi-level effects for decanano device process simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  5. Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2003

  1. Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena

    Physical Review B - Condensed Matter and Materials Physics, Vol. 68, Núm. 19

2002

  1. Carbon in silicon: Modeling of diffusion and clustering mechanisms

    Journal of Applied Physics, Vol. 92, Núm. 3, pp. 1582-1587

2000

  1. Atomistic modeling of complex silicon processing scenarios

    Materials Research Society Symposium - Proceedings

  2. Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data

    Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63

1997

  1. Optical phonons of strained GaAs/GaP quantum wells studied by Raman spectroscopy

    Applied Physics Letters, Vol. 71, Núm. 10, pp. 1353-1355

1996

  1. Consequences of interface corrugation on the lattice dynamics and raman spectra in high-index AlAs/GaAs superlattices

    Solid-State Electronics, Vol. 40, Núm. 1-8, pp. 175-180

  2. Raman response of (11N)-oriented GaAs/AlAs superlattices within the framework of the bond polarizability model

    Solid State Communications, Vol. 98, Núm. 4, pp. 307-311