LUIS ALBERTO
BAILON VEGA
Researcher in the period 1981-2016
JUAN JOSE
BARBOLLA SANCHO
Researcher in the period 1983-2005
Publications by the researcher in collaboration with JUAN JOSE BARBOLLA SANCHO (35)
2005
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Boron redistribution in pre-amorphized Si during thermal annealing
2005 Spanish Conference on Electron Devices, Proceedings
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Study of the amorphous phase of silicon using molecular dynamics simulation techniques
2005 Spanish Conference on Electron Devices, Proceedings
2003
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Monte Carlo modeling of amorphization resulting from ion implantation in Si
Computational Materials Science
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Statistical 3D damage accumulation model for ion implant simulators
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2002
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Improved binary collision approximation ion implant simulators
Journal of Applied Physics, Vol. 91, Núm. 2, pp. 658-667
2001
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Algorithm for statistical noise reduction in three-dimensional ion implant simulations
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 174, Núm. 4, pp. 433-438
2000
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Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data
Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63
1999
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Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions
Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860
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Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions
Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980
1998
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Monte Carlo atomistic simulation of polycrystalline aluminum deposition
Materials Research Society Symposium - Proceedings
1997
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Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation
Journal of Applied Physics, Vol. 81, Núm. 3, pp. 1488-1494
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Molecular dynamics simulations of ion bombardment processes
Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896
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New methodology for designing floating ring termination technique in high voltage structure
Materials Research Society Symposium - Proceedings
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Numerical study of avalanche breakdown of 6H-SiC planar p-n junctions
Diamond and Related Materials, Vol. 6, Núm. 10, pp. 1500-1503
1996
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Avalanche breakdown of high-voltage p-n junctions of SiC
Microelectronics Journal, Vol. 27, Núm. 1, pp. 43-51
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Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions
Journal of Applied Physics, Vol. 79, Núm. 1, pp. 310-315
1995
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Design of vertical power MOSFETs in SiC
Proceedings of the International Conference on Microelectronics
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Low energy ion implantation simulation using a modified binary collision approximation code
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 228-231
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Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 301-304
1994
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On the forward conduction mechanisms in SiC P-N junctions
Materials Research Society Symposium - Proceedings