Publicacións en colaboración con investigadores/as de University of Tartu (16)

2015

  1. Charge and current hysteresis in dysprosium-doped zirconium oxide thin films

    Microelectronic Engineering, Vol. 147, pp. 55-58

  2. Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

    Thin Solid Films, Vol. 591, pp. 55-59

  3. Electrical characterization of MIS capacitors based on Dy2O3-doped ZrO2 dielectrics

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

2014

  1. Resistive switching behavior and electrical properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

    Materials Research Society Symposium Proceedings

2009

  1. Electrical characterization of high-k based MIS capacitors using flat-band voltage transients

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 389-393

  3. Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 416-420

2008

  1. Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors

    Journal of the Electrochemical Society, Vol. 155, Núm. 11

  2. Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices

    Journal of Non-Crystalline Solids, Vol. 354, Núm. 2-9, pp. 393-398

  3. Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films

    Journal of Non-Crystalline Solids, Vol. 354, Núm. 2-9, pp. 404-408

2007

  1. Electrical characterization of high-k dielectrics by means of flat-band voltage transient recording

    Materials Research Society Symposium Proceedings

  2. Electrical properties of atomic-layer-deposited thin gadolinium oxide high- k gate dielectrics

    Journal of the Electrochemical Society, Vol. 154, Núm. 10

  3. Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics

    Microelectronics Reliability, Vol. 47, Núm. 4-5 SPEC. ISS., pp. 653-656

2006

  1. Electrical defects in atomic layer deposited HfO2 films on silicon: Influence of precursor chemistries and substrate treatment

    DEFECTS IN HIGH-K GATE DIELECTRIC STACKS: NANO-ELECTRONIC SEMICONDUCTOR DEVICES

  2. Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon

    Journal of Applied Physics, Vol. 100, Núm. 9

  3. Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon

    Journal of Applied Physics, Vol. 99, Núm. 5