Publicaciones en las que colabora con JUAN JOSE BARBOLLA SANCHO (63)

2006

  1. A 32-mW 320-MHz continuous-time complex delta-sigma ADC for multi-mode wireless-LAN receivers

    IEEE Journal of Solid-State Circuits, Vol. 41, Núm. 2, pp. 339-350

2005

  1. A comparative study of atomic layer deposited advanced high-k dielectrics

    2005 Spanish Conference on Electron Devices, Proceedings

  2. A dual-mode, complex, ΔΣ ADC in CMOS for Wireless-LAN receivers

    Proceedings of SPIE - The International Society for Optical Engineering

  3. Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

    Thin Solid Films, Vol. 474, Núm. 1-2, pp. 222-229

  4. Electrical characterization of atomic-layer-deposited hafnium silicate for alternative gate dielectric application

    2005 Spanish Conference on Electron Devices, Proceedings

  5. Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition

    Microelectronics Reliability

  6. Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

    2005 Spanish Conference on Electron Devices, Proceedings

  7. Jitter effect comparison on continuous-time sigma-delta modulators with different feedback signal shapes

    Proceedings of SPIE - The International Society for Optical Engineering

  8. Noise simulation of continuous-time ΣΔ modulators

    AIP Conference Proceedings

  9. Nonlinearity correction for multibit ΔΣ DACs

    IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 52, Núm. 6, pp. 1033-1041

2004

  1. Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, Núm. 1, pp. 66-70

  2. Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon

    Journal of Applied Physics, Vol. 96, Núm. 3, pp. 1365-1372

  3. Low-power pipeline ADC for wireless LANs

    IEEE Journal of Solid-State Circuits, Vol. 39, Núm. 8, pp. 1338-1340

  4. The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon

    Semiconductor Science and Technology, Vol. 19, Núm. 9, pp. 1141-1148

2003

  1. A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378

  2. A switched Opamp-based bandpass filter: Design and implementation in a 0.35 μm CMOS technology

    Analog Integrated Circuits and Signal Processing, Vol. 34, Núm. 3, pp. 201-209

  3. Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates

    Materials Research Society Symposium - Proceedings

  4. Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates

    MRS Proceedings, Vol. 786

  5. Conductance transient, capacitance-voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films

    Solid-State Electronics

  6. Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290