Publicaciones (25) Publicaciones en las que ha participado algún/a investigador/a

1999

  1. Activation and deactivation of implanted B in Si

    Applied Physics Letters, Vol. 75, Núm. 5, pp. 662-664

  2. Atomistic simulations of ion implantation and diffusion

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. B cluster formation and dissolution in Si: A scenario based on atomistic modeling

    Applied Physics Letters, Vol. 74, Núm. 24, pp. 3657-3659

  4. Boron pileup and clustering in silicon-on-insulator films

    Applied Physics Letters, Vol. 75, Núm. 8, pp. 1083-1085

  5. Cluster ripening and transient enhanced diffusion in silicon

    Materials Science in Semiconductor Processing, Vol. 2, Núm. 4, pp. 369-376

  6. Continuum treatment of spatial correlation in damage annealing

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 153, Núm. 1-4, pp. 172-176

  7. Defects and diffusion in MeV implanted silicon

    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, PTS 1 AND 2

  8. Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 373-377

  9. Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

    Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860

  10. Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

    Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980

  11. Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 413-418

  12. Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced AI/SiNx:H/InP metal-insulator-semiconductor structures fabrication

    Journal of Applied Physics, Vol. 86, Núm. 12, pp. 6924-6930

  13. Energetics of self-interstitial clusters in si

    Physical Review Letters, Vol. 82, Núm. 22, pp. 4460-4463

  14. Fabrication of ta2o5 thin films by anodic oxidation of tantalum nitride and tantalum suicide: growing mechanisms, electrical characterization and ulsi m-i-m capacitor performances

    Materials Research Society Symposium - Proceedings, Vol. 567, pp. 371-378

  15. Fundamental diffusion issues for deep-submicron device processing

    Technical Digest - International Electron Devices Meeting

  16. Magnetic After-Effects in Barium Hexagonal Ferrites with BaO·6Fe<sub>2</sub>O<sub>3</sub> (M-Type) Stoichiometry

    Journal of the Magnetics Society of Japan, Vol. 23, Núm. 12, pp. 2134-2139

  17. Magnetic disaccommodation in aluminium ferrites

    Journal of Magnetism and Magnetic Materials, Vol. 202, Núm. 1, pp. 141-149

  18. Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

    Applied Physics Letters, Vol. 74, Núm. 9, pp. 1299-1301

  19. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

    Applied Physics Letters, Vol. 74, Núm. 14, pp. 2017-2019

  20. Ostwald ripening of {113} defects precursors and transient enhanced diffusion

    Materials Research Society Symposium - Proceedings, Vol. 568, pp. 163-168