2005

1. A comparative study of atomic layer deposited advanced high-k dielectrics

   2005 Spanish Conference on Electron Devices, Proceedings

2. A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework

   Computational Materials Science

3. Amorphous layer depth dependence on implant parameters during Si self-implantation

   Materials Science and Engineering B: Solid-State Materials for Advanced Technology

4. Atomistic analysis of annealing behavior of amorphous regions

   2005 Spanish Conference on Electron Devices, Proceedings

5. Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

   Journal of Applied Physics, Vol. 97, Núm. 10

6. Atomistic modeling of dopant implantation and annealing in Si: Damage evolution, dopant diffusion and activation

   Computational Materials Science

7. Atomistic modeling of ion beam induced amorphization in silicon

   Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

8. Atomistic simulations in Si processing: Bridging the gap between atoms and experiments

   Materials Science and Engineering B: Solid-State Materials for Advanced Technology

9. Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth

   Materials Science and Engineering B: Solid-State Materials for Advanced Technology

10. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

11. Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

    Thin Solid Films, Vol. 474, Núm. 1-2, pp. 222-229

12. Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

13. Electrical characterization of atomic-layer-deposited hafnium silicate for alternative gate dielectric application

    2005 Spanish Conference on Electron Devices, Proceedings

14. Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition

    Microelectronics Reliability

15. Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

    Journal of Applied Physics, Vol. 98, Núm. 5

16. Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

    2005 Spanish Conference on Electron Devices, Proceedings

17. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

    Journal of Applied Physics, Vol. 98, Núm. 4

18. Jitter effect comparison on continuous-time sigma-delta modulators with different feedback signal shapes

    Proceedings of SPIE - The International Society for Optical Engineering

19. Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

    Applied Physics Letters, Vol. 86, Núm. 25, pp. 1-3

20. Molecular dynamics characterization of as-implanted damage in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology