LUIS ALBERTO BAILON VEGA-rekin lankidetzan egindako argitalpenak (18)

2003

  1. Statistical 3D damage accumulation model for ion implant simulators

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

2002

  1. Enhanced modelization of ion implant simulation in compound semiconductors

    Solid-State Electronics, Vol. 46, Núm. 9, pp. 1315-1324

  2. Improved binary collision approximation ion implant simulators

    Journal of Applied Physics, Vol. 91, Núm. 2, pp. 658-667

2001

  1. Algorithm for statistical noise reduction in three-dimensional ion implant simulations

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 174, Núm. 4, pp. 433-438

2000

  1. Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data

    Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63

1998

  1. Monte Carlo atomistic simulation of polycrystalline aluminum deposition

    Materials Research Society Symposium - Proceedings

1997

  1. Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation

    Journal of Applied Physics, Vol. 81, Núm. 3, pp. 1488-1494

  2. Molecular dynamics simulations of ion bombardment processes

    Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896

1995

  1. Low energy ion implantation simulation using a modified binary collision approximation code

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 228-231

  2. Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 301-304

1994

  1. On the forward conduction mechanisms in SiC P-N junctions

    Materials Research Society Symposium - Proceedings

1993

  1. Computer simulation of point-defect distributions generated by ion implantation

    Nuclear Inst. and Methods in Physics Research, B, Vol. 80-81, Núm. PART 1, pp. 172-175

  2. Detailed computer simulation of damage accumulation in ion irradiated crystalline targets

    Vacuum, Vol. 44, Núm. 3-4, pp. 321-323

1992

  1. Interwell enhancement of the photoluminescence efficiency in GaAs/AlGaAs quantum wells

    Journal of Applied Physics, Vol. 71, Núm. 10, pp. 5136-5139

1991

  1. Optical capture cross sections of palladium in silicon

    Journal of Applied Physics, Vol. 69, Núm. 1, pp. 298-301

1987

  1. Optical admittance spectroscopy: A new method for deep level characterization

    Journal of Applied Physics, Vol. 61, Núm. 7, pp. 2541-2545

1986

  1. Electron thermal emission rates of nickel centers in silicon

    Solid State Electronics, Vol. 29, Núm. 9, pp. 883-884

1981

  1. Sobre la DLTS en estructuras fuertemente compensadas con un centro profundo

    III Reunión Grupo Especializado de Electricidad y Magnetismo de la RSEF: comunicaciones, noviembre 1981