Publicaciones en colaboración con investigadores/as de Centre National de la Recherche Scientifique (16)

2022

  1. Luminescence in undoped and Nb-doped SrTiO3 crystals: Bulk and surface emission

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 283

2021

  1. Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells

    Journal of Physics D: Applied Physics, Vol. 54, Núm. 44

2020

  1. Effect of the plasma etching on InAsP/InP quantum well structures measured through low temperature micro-photoluminescence and cathodoluminescence

    ECS Transactions

2018

  1. Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces

    Optics Letters, Vol. 43, Núm. 15, pp. 3505-3508

  2. Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry

    Journal of Electronic Materials

2016

  1. Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 34, Núm. 4

2015

  1. Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour

    Microelectronics Reliability, Vol. 55, Núm. 9-10, pp. 1750-1753

2003

  1. Study of doping in GaAs layers by local probe techniques: Micro-Raman, micro-photoluminescence and cathodoluminescence

    Materials Research Society Symposium - Proceedings

2002

  1. Doping profiles of n-type GaAs layers grown on Si by the conformal method

    Materials Research Society Symposium - Proceedings, Vol. 692, pp. 417-422

  2. Optical characterization of GaAs/Si layers grown by the conformal method (confined lateral epitaxial growth)

    Journal of Materials Research, Vol. 17, Núm. 6, pp. 1341-1349

  3. Study of defects in conformal GaAs/Si layers by optical techniques and photoetching

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  4. Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

    Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5045-5050

2001

  1. High-quality GaAs-related lateral junctions on Si by conformal growth

    Optical Materials

  2. Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 197-201

  3. Self-doping near the seed/layer interface in conformal GaAs layers grown on Si

    Applied Physics Letters, Vol. 79, Núm. 9, pp. 1270-1272

2000

  1. Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman

    Journal of Crystal Growth, Vol. 210, Núm. 1, pp. 198-202