Publications dans lesquelles il/elle collabore avec JUAN JOSE BARBOLLA SANCHO (24)

2005

  1. Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

    Journal of Applied Physics, Vol. 98, Núm. 5

  3. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

    Journal of Applied Physics, Vol. 98, Núm. 4

  4. Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

    Applied Physics Letters, Vol. 86, Núm. 25, pp. 1-3

  5. Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

    Physical Review B - Condensed Matter and Materials Physics, Vol. 72, Núm. 3

  6. Physically based modeling of dislocation loops in ion implantation processing in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2004

  1. A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Comprehensive, physically based modelling of As in Si

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

    Applied Physics Letters, Vol. 84, Núm. 24, pp. 4962-4964

  4. Physical modeling of Fermi-level effects for decanano device process simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  5. Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2003

  1. Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena

    Physical Review B - Condensed Matter and Materials Physics, Vol. 68, Núm. 19

2002

  1. Carbon in silicon: Modeling of diffusion and clustering mechanisms

    Journal of Applied Physics, Vol. 92, Núm. 3, pp. 1582-1587

2000

  1. Atomistic modeling of complex silicon processing scenarios

    Materials Research Society Symposium - Proceedings

1999

  1. Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 373-377

  2. Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

    Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860

  3. Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

    Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980

  4. Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 413-418

1998

  1. Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions

    Semiconductor Science and Technology, Vol. 13, Núm. 4, pp. 389-393

1997

  1. Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

    Journal of Applied Physics, Vol. 81, Núm. 7, pp. 3143-3150