RUTH
PINACHO GOMEZ
PROFESORES TITULARES DE UNIVERSIDAD
JUAN JOSE
BARBOLLA SANCHO
Investigador no período 1983-2005
Publicacións nas que colabora con JUAN JOSE BARBOLLA SANCHO (24)
2005
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Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators
Journal of Applied Physics, Vol. 98, Núm. 5
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Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population
Journal of Applied Physics, Vol. 98, Núm. 4
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Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach
Applied Physics Letters, Vol. 86, Núm. 25, pp. 1-3
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Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon
Physical Review B - Condensed Matter and Materials Physics, Vol. 72, Núm. 3
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Physically based modeling of dislocation loops in ion implantation processing in silicon
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2004
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A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Comprehensive, physically based modelling of As in Si
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features
Applied Physics Letters, Vol. 84, Núm. 24, pp. 4962-4964
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Physical modeling of Fermi-level effects for decanano device process simulations
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2003
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Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena
Physical Review B - Condensed Matter and Materials Physics, Vol. 68, Núm. 19
2002
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Carbon in silicon: Modeling of diffusion and clustering mechanisms
Journal of Applied Physics, Vol. 92, Núm. 3, pp. 1582-1587
2000
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Atomistic modeling of complex silicon processing scenarios
Materials Research Society Symposium - Proceedings
1999
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Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication
Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 373-377
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Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions
Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860
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Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions
Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980
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Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions
Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 413-418
1998
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Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions
Semiconductor Science and Technology, Vol. 13, Núm. 4, pp. 389-393
1997
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Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP
Journal of Applied Physics, Vol. 81, Núm. 7, pp. 3143-3150