MARIA
ABOY CEBRIAN
PROFESORES TITULARES DE UNIVERSIDAD
IVAN
SANTOS TEJIDO
PROFESORES TITULARES DE UNIVERSIDAD
Publicacións nas que colabora con IVAN SANTOS TEJIDO (56)
2023
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First Principles Characterization of PnVmClusters in Crystalline Silicon
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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Molecular Dynamics Study of Stress Relaxation During Ge Deposition on Si(100) 2× 1 Substrates
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
2022
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Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 512, pp. 42-48
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Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 512, pp. 54-59
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Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study
Acta Materialia, Vol. 241
2021
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Atomistic modeling of laser-related phenomena
Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics (Elsevier), pp. 79-136
2019
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Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study
Journal of Non-Crystalline Solids, Vol. 503-504, pp. 20-27
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On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 458, pp. 179-183
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{001} loops in silicon unraveled
Acta Materialia, Vol. 166, pp. 192-201
2018
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I ON Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions
Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
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Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation
Journal of Electronic Materials
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Modeling SiGe Through Classical Molecular Dynamics Simulations: Chasing an Appropriate Empirical Potential
Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
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W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations
Journal of Electronic Materials
2017
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Characterization of amorphous Si generated through classical molecular dynamics simulations
2017 Spanish Conference on Electron Devices, CDE 2017
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Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique
2017 Spanish Conference on Electron Devices, CDE 2017
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Improved physical models for advanced silicon device processing
Materials Science in Semiconductor Processing, Vol. 62, pp. 62-79
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Ultrafast Generation of Unconventional {001 } Loops in Si
Physical Review Letters, Vol. 119, Núm. 20
2016
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Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations
Journal of Physics D: Applied Physics, Vol. 49, Núm. 7
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Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon
Materials Science in Semiconductor Processing, Vol. 42, pp. 235-238