Publicacions en què col·labora amb ALFONSO GOMEZ BRAVO (23)

2013

  1. 2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O 3, HfO2 and nanolaminated dielectrics

    Solid-State Electronics, Vol. 79, pp. 65-74

  2. Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1

2011

  1. A study of tunneling assisted charge exchange on the inner interface of high-k dielectric stacks

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  2. Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  3. Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2 O3, HfO2, and nanolaminates on different silicon substrates

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

  4. Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O 3 and nanolaminated films deposited on p-Si

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

  5. Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

    Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272

  6. Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

  7. Negative-resistance effect in Al2O3 based and nanolaminated MIS structures

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

2010

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Journal of Applied Physics, Vol. 107, Núm. 11

  2. Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon

    ECS Transactions

2009

  1. Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors

    Microelectronic Engineering, Vol. 86, Núm. 7-9, pp. 1689-1691

  2. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  4. Electrical characterization of high-k based MIS capacitors using flat-band voltage transients

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  5. Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 389-393

  6. Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 416-420

  7. Study of atomic layer deposited zirconium oxide thin films by using mono-cyclopentadienyl based precursors

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors

    Journal of the Electrochemical Society, Vol. 155, Núm. 11

  2. Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

    Journal of Applied Physics, Vol. 104, Núm. 9