M. Ritala-rekin lankidetzan egindako argitalpenak (19)

2015

  1. Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

    Thin Solid Films, Vol. 591, pp. 55-59

2014

  1. Resistive switching behavior and electrical properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

    Materials Research Society Symposium Proceedings

2013

  1. Influence of growth and annealing temperatures on the electrical properties of Nb2O5-based MIM capacitors

    Semiconductor Science and Technology, Vol. 28, Núm. 5

2011

  1. Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  2. Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

2009

  1. Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors

    Microelectronic Engineering, Vol. 86, Núm. 7-9, pp. 1689-1691

  2. Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Electrical characterization of high-k based MIS capacitors using flat-band voltage transients

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  4. Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 389-393

  5. Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 416-420

  6. Study of atomic layer deposited zirconium oxide thin films by using mono-cyclopentadienyl based precursors

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors

    Journal of the Electrochemical Society, Vol. 155, Núm. 11

  2. Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices

    Journal of Non-Crystalline Solids, Vol. 354, Núm. 2-9, pp. 393-398

  3. Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films

    Journal of Non-Crystalline Solids, Vol. 354, Núm. 2-9, pp. 404-408

2007

  1. Electrical characterization of high-k dielectrics by means of flat-band voltage transient recording

    Materials Research Society Symposium Proceedings

  2. Electrical properties of atomic-layer-deposited thin gadolinium oxide high- k gate dielectrics

    Journal of the Electrochemical Society, Vol. 154, Núm. 10

  3. Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics

    Microelectronics Reliability, Vol. 47, Núm. 4-5 SPEC. ISS., pp. 653-656

2006

  1. Electrical defects in atomic layer deposited HfO2 films on silicon: Influence of precursor chemistries and substrate treatment

    DEFECTS IN HIGH-K GATE DIELECTRIC STACKS: NANO-ELECTRONIC SEMICONDUCTOR DEVICES

  2. Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon

    Journal of Applied Physics, Vol. 100, Núm. 9