Publicaciones en las que colabora con C.S. Rafferty (18)

2003

  1. Enhanced low temperature electrical activation of B in Si

    Applied Physics Letters, Vol. 82, Núm. 2, pp. 215-217

2001

  1. Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

    Applied Physics Letters, Vol. 79, Núm. 9, pp. 1273-1275

2000

  1. Atomistic modeling of complex silicon processing scenarios

    Materials Research Society Symposium - Proceedings

  2. Dose, energy, and ion species dependence of the effective plus factor for transient enhanced diffusion

    Journal of the Electrochemical Society, Vol. 147, Núm. 9, pp. 3494-3501

  3. Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data

    Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63

  4. Use of transient enhanced diffusion to tailor boron out-diffusion

    IEEE Transactions on Electron Devices, Vol. 47, Núm. 7, pp. 1401-1405

1999

  1. Activation and deactivation of implanted B in Si

    Applied Physics Letters, Vol. 75, Núm. 5, pp. 662-664

  2. Atomistic simulations of ion implantation and diffusion

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. B cluster formation and dissolution in Si: A scenario based on atomistic modeling

    Applied Physics Letters, Vol. 74, Núm. 24, pp. 3657-3659

  4. Boron pileup and clustering in silicon-on-insulator films

    Applied Physics Letters, Vol. 75, Núm. 8, pp. 1083-1085

  5. Continuum treatment of spatial correlation in damage annealing

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 153, Núm. 1-4, pp. 172-176

1998

  1. Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model

    Applied Physics Letters, Vol. 73, Núm. 10, pp. 1421-1423

1997

  1. Atomistic model of transient enhanced diffusion and clustering of boron in silicon

    Materials Research Society Symposium - Proceedings

  2. B diffusion and clustering in ion implanted Si: The role of B cluster precursors

    Applied Physics Letters, Vol. 70, Núm. 17, pp. 2285-2287

  3. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

    Journal of Applied Physics, Vol. 81, Núm. 9, pp. 6031-6050

1996

  1. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, Vol. 68, Núm. 17, pp. 2395-2397

1995

  1. Ion implantation and transient enhanced diffusion

    Technical Digest - International Electron Devices Meeting

  2. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, pp. 2395