Electricidad y Electrónica
Departamento
AT and T Bell Laboratories
Newark, EE. UU.Publicaciones en colaboración con investigadores/as de AT and T Bell Laboratories (40)
2006
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A 32-mW 320-MHz continuous-time complex delta-sigma ADC for multi-mode wireless-LAN receivers
IEEE Journal of Solid-State Circuits, Vol. 41, Núm. 2, pp. 339-350
2001
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Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon
Applied Physics Letters, Vol. 79, Núm. 9, pp. 1273-1275
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DLTS and conductance transient investigation on defects in anodic tantalum pentoxide thin films
Journal of Materials Science: Materials in Electronics, Vol. 12, Núm. 4-6, pp. 317-321
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Tantalum pentoxide obtained from TaNx and TaSi2 anodisation: An inexpensive and thermally stable high k dielectric
Solid-State Electronics, Vol. 45, Núm. 8, pp. 1441-1450
2000
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Dominant iron gettering mechanism in p/p+ silicon wafers
Applied Physics Letters, Vol. 77, Núm. 2, pp. 241-243
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Dose, energy, and ion species dependence of the effective plus factor for transient enhanced diffusion
Journal of the Electrochemical Society, Vol. 147, Núm. 9, pp. 3494-3501
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Electrical characteristics of anodic tantalum pentoxide thin films under thermal stress
Microelectronics Reliability, Vol. 40, Núm. 4-5, pp. 659-662
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Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data
Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63
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The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations
Materials Research Society Symposium - Proceedings, Vol. 610, pp. B7.2.1-B7.2.6
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The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations
Materials Research Society Symposium - Proceedings
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Use of transient enhanced diffusion to tailor boron out-diffusion
IEEE Transactions on Electron Devices, Vol. 47, Núm. 7, pp. 1401-1405
1999
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Activation and deactivation of implanted B in Si
Applied Physics Letters, Vol. 75, Núm. 5, pp. 662-664
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B cluster formation and dissolution in Si: A scenario based on atomistic modeling
Applied Physics Letters, Vol. 74, Núm. 24, pp. 3657-3659
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Boron pileup and clustering in silicon-on-insulator films
Applied Physics Letters, Vol. 75, Núm. 8, pp. 1083-1085
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Continuum treatment of spatial correlation in damage annealing
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 153, Núm. 1-4, pp. 172-176
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Fabrication of ta2o5 thin films by anodic oxidation of tantalum nitride and tantalum suicide: growing mechanisms, electrical characterization and ulsi m-i-m capacitor performances
Materials Research Society Symposium - Proceedings, Vol. 567, pp. 371-378
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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
Applied Physics Letters, Vol. 74, Núm. 9, pp. 1299-1301
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Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion
Applied Physics Letters, Vol. 74, Núm. 14, pp. 2017-2019
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Use of anodic tantalum pentoxide for high-density capacitor fabrication
Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 379-384