Publicaciones en colaboración con investigadores/as de AT and T Bell Laboratories (40)

2006

  1. A 32-mW 320-MHz continuous-time complex delta-sigma ADC for multi-mode wireless-LAN receivers

    IEEE Journal of Solid-State Circuits, Vol. 41, Núm. 2, pp. 339-350

2001

  1. Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

  2. Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

    Applied Physics Letters, Vol. 79, Núm. 9, pp. 1273-1275

  3. DLTS and conductance transient investigation on defects in anodic tantalum pentoxide thin films

    Journal of Materials Science: Materials in Electronics, Vol. 12, Núm. 4-6, pp. 317-321

  4. Tantalum pentoxide obtained from TaNx and TaSi2 anodisation: An inexpensive and thermally stable high k dielectric

    Solid-State Electronics, Vol. 45, Núm. 8, pp. 1441-1450

2000

  1. Dominant iron gettering mechanism in p/p+ silicon wafers

    Applied Physics Letters, Vol. 77, Núm. 2, pp. 241-243

  2. Dose, energy, and ion species dependence of the effective plus factor for transient enhanced diffusion

    Journal of the Electrochemical Society, Vol. 147, Núm. 9, pp. 3494-3501

  3. Electrical characteristics of anodic tantalum pentoxide thin films under thermal stress

    Microelectronics Reliability, Vol. 40, Núm. 4-5, pp. 659-662

  4. Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data

    Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63

  5. The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations

    Materials Research Society Symposium - Proceedings, Vol. 610, pp. B7.2.1-B7.2.6

  6. The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations

    Materials Research Society Symposium - Proceedings

  7. Use of transient enhanced diffusion to tailor boron out-diffusion

    IEEE Transactions on Electron Devices, Vol. 47, Núm. 7, pp. 1401-1405

1999

  1. Activation and deactivation of implanted B in Si

    Applied Physics Letters, Vol. 75, Núm. 5, pp. 662-664

  2. B cluster formation and dissolution in Si: A scenario based on atomistic modeling

    Applied Physics Letters, Vol. 74, Núm. 24, pp. 3657-3659

  3. Boron pileup and clustering in silicon-on-insulator films

    Applied Physics Letters, Vol. 75, Núm. 8, pp. 1083-1085

  4. Continuum treatment of spatial correlation in damage annealing

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 153, Núm. 1-4, pp. 172-176

  5. Fabrication of ta2o5 thin films by anodic oxidation of tantalum nitride and tantalum suicide: growing mechanisms, electrical characterization and ulsi m-i-m capacitor performances

    Materials Research Society Symposium - Proceedings, Vol. 567, pp. 371-378

  6. Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

    Applied Physics Letters, Vol. 74, Núm. 9, pp. 1299-1301

  7. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

    Applied Physics Letters, Vol. 74, Núm. 14, pp. 2017-2019

  8. Use of anodic tantalum pentoxide for high-density capacitor fabrication

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 379-384