Publicaciones en las que colabora con Hans Joachim L. Gossmann (23)

2005

  1. Amorphous layer depth dependence on implant parameters during Si self-implantation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2004

  1. Radiation-enhanced diffusion of Sb and B in silicon during implantation below 400 ° C

    Physical Review B - Condensed Matter and Materials Physics, Vol. 69, Núm. 12

2003

  1. Enhanced low temperature electrical activation of B in Si

    Applied Physics Letters, Vol. 82, Núm. 2, pp. 215-217

2002

  1. Carbon in silicon: Modeling of diffusion and clustering mechanisms

    Journal of Applied Physics, Vol. 92, Núm. 3, pp. 1582-1587

2001

  1. Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

    Applied Physics Letters, Vol. 79, Núm. 9, pp. 1273-1275

2000

  1. The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations

    Materials Research Society Symposium - Proceedings, Vol. 610, pp. B7.2.1-B7.2.6

  2. The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations

    Materials Research Society Symposium - Proceedings

1999

  1. Activation and deactivation of implanted B in Si

    Applied Physics Letters, Vol. 75, Núm. 5, pp. 662-664

  2. Atomistic simulations of ion implantation and diffusion

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. B cluster formation and dissolution in Si: A scenario based on atomistic modeling

    Applied Physics Letters, Vol. 74, Núm. 24, pp. 3657-3659

  4. Boron pileup and clustering in silicon-on-insulator films

    Applied Physics Letters, Vol. 75, Núm. 8, pp. 1083-1085

  5. Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

    Applied Physics Letters, Vol. 74, Núm. 9, pp. 1299-1301

  6. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

    Applied Physics Letters, Vol. 74, Núm. 14, pp. 2017-2019

1998

  1. Atomistic modeling of point and extended defects in crystalline materials

    Materials Research Society Symposium - Proceedings

  2. Boron-enhanced-diffusion of boron from ultra-low-energy boron implantation

    SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2

  3. Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

    Materials Science and Engineering A, Vol. 253, Núm. 1-2, pp. 269-274

  4. Damage, defects and diffusion from ultra-low energy (0-5 keV) ion implantation of silicon

    Materials Science in Semiconductor Processing, Vol. 1, Núm. 1, pp. 17-25

  5. Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model

    Journal of Applied Physics, Vol. 83, Núm. 11, pp. 6182-6184

  6. Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model

    Applied Physics Letters, Vol. 73, Núm. 10, pp. 1421-1423

1997

  1. Atomistic model of transient enhanced diffusion and clustering of boron in silicon

    Materials Research Society Symposium - Proceedings