Publicaciones en las que colabora con JUAN JOSE BARBOLLA SANCHO (26)

2005

  1. Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

    Journal of Applied Physics, Vol. 98, Núm. 5

  3. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

    Journal of Applied Physics, Vol. 98, Núm. 4

  4. Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

    Applied Physics Letters, Vol. 86, Núm. 25, pp. 1-3

  5. Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

    Physical Review B - Condensed Matter and Materials Physics, Vol. 72, Núm. 3

  6. Physically based modeling of dislocation loops in ion implantation processing in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2004

  1. A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Comprehensive, physically based modelling of As in Si

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  3. Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

    Applied Physics Letters, Vol. 84, Núm. 24, pp. 4962-4964

  4. Physical modeling of Fermi-level effects for decanano device process simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  5. Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2003

  1. Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films

    Journal of Applied Physics, Vol. 94, Núm. 1, pp. 163-168

2000

  1. Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data

    Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63

1998

  1. Atomistic modeling of point and extended defects in crystalline materials

    Materials Research Society Symposium - Proceedings

  2. Monte Carlo atomistic simulation of polycrystalline aluminum deposition

    Materials Research Society Symposium - Proceedings

1997

  1. Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation

    Journal of Applied Physics, Vol. 81, Núm. 3, pp. 1488-1494

  2. Molecular dynamics simulations of ion bombardment processes

    Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896

1996

  1. Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 112, Núm. 1-4, pp. 156-159

1995

  1. An improved molecular dynamics scheme for ion bombardment simulations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 7-11

  2. Detailed computer simulation of ion implantation processes into crystals

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 11, pp. 1191-1193