Publikationen, an denen er mitarbeitet M. Leskelä (30)

2021

  1. Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

    Solid-State Electronics, Vol. 186

2020

  1. Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films

    ECS Transactions

2018

  1. Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

    2017 32nd Conference on Design of Circuits and Integrated Systems, DCIS 2017 - Proceedings

2015

  1. Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

    Thin Solid Films, Vol. 591, pp. 55-59

2014

  1. Resistive switching behavior and electrical properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

    Materials Research Society Symposium Proceedings

  2. Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors

    Microelectronics Reliability

2013

  1. Influence of growth and annealing temperatures on the electrical properties of Nb2O5-based MIM capacitors

    Semiconductor Science and Technology, Vol. 28, Núm. 5

2011

  1. Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  2. Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

2009

  1. Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors

    Microelectronic Engineering, Vol. 86, Núm. 7-9, pp. 1689-1691

  2. Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Electrical characterization of high-k based MIS capacitors using flat-band voltage transients

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  4. Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 389-393

  5. Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 416-420

  6. Study of atomic layer deposited zirconium oxide thin films by using mono-cyclopentadienyl based precursors

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors

    Journal of the Electrochemical Society, Vol. 155, Núm. 11

  2. Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices

    Journal of Non-Crystalline Solids, Vol. 354, Núm. 2-9, pp. 393-398

  3. Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films

    Journal of Non-Crystalline Solids, Vol. 354, Núm. 2-9, pp. 404-408

2007

  1. Electrical characterization of high-k dielectrics by means of flat-band voltage transient recording

    Materials Research Society Symposium Proceedings

  2. Electrical properties of atomic-layer-deposited thin gadolinium oxide high- k gate dielectrics

    Journal of the Electrochemical Society, Vol. 154, Núm. 10