Publicaciones en las que colabora con JUAN JOSE BARBOLLA SANCHO (60)

2005

  1. A comparative study of atomic layer deposited advanced high-k dielectrics

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Atomistic analysis of annealing behavior of amorphous regions

    2005 Spanish Conference on Electron Devices, Proceedings

  3. Atomistic modeling of ion beam induced amorphization in silicon

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

  4. Atomistic simulations in Si processing: Bridging the gap between atoms and experiments

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  5. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

  6. Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

    Thin Solid Films, Vol. 474, Núm. 1-2, pp. 222-229

  7. Electrical characterization of atomic-layer-deposited hafnium silicate for alternative gate dielectric application

    2005 Spanish Conference on Electron Devices, Proceedings

  8. Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition

    Microelectronics Reliability

  9. Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

    2005 Spanish Conference on Electron Devices, Proceedings

  10. Molecular dynamics characterization of as-implanted damage in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  11. Morphology of as-implanted damage in silicon: A molecular dynamics study

    2005 Spanish Conference on Electron Devices, Proceedings

  12. On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO 2/Si fabricated by ECR-CVD

    Microelectronics Reliability

  13. Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions

    2005 Spanish Conference on Electron Devices, Proceedings

  14. Study of the amorphous phase of silicon using molecular dynamics simulation techniques

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers

    Materials Research Society Symposium - Proceedings

  3. Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, Núm. 1, pp. 66-70

  4. Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon

    Journal of Applied Physics, Vol. 96, Núm. 3, pp. 1365-1372

  5. The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon

    Semiconductor Science and Technology, Vol. 19, Núm. 9, pp. 1141-1148

2003

  1. A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378