Publicaciones en las que colabora con M. Leskelä (36)

2018

  1. Atomic layer deposition and properties of HFO 2 -Al 2 O 3 nanolaminates

    ECS Journal of Solid State Science and Technology, Vol. 7, Núm. 9, pp. P501-P508

  2. Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

    2017 32nd Conference on Design of Circuits and Integrated Systems, DCIS 2017 - Proceedings

  3. Atomic layer deposition and performance of ZrO2-Al2O3 thin films

    ECS Journal of Solid State Science and Technology, Vol. 7, Núm. 5, pp. P287-P294

  4. Atomic layer deposition of zirconium dioxide from zirconium tetraiodide and ozone

    ECS Journal of Solid State Science and Technology, Vol. 7, Núm. 2, pp. P1-P8

  5. Study of the influence of the dielectric composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications

    ECS Transactions

2009

  1. Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors

    Microelectronic Engineering, Vol. 86, Núm. 7-9, pp. 1689-1691

  2. Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Electrical characterization of high-k based MIS capacitors using flat-band voltage transients

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  4. Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 389-393

  5. Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 416-420

  6. Study of atomic layer deposited zirconium oxide thin films by using mono-cyclopentadienyl based precursors

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09