Electricidad y Electrónica
Departamento
![Foto de David J.](/img/nophoto.png)
David J.
Eaglesham
Publicaciones en las que colabora con David J. Eaglesham (15)
1999
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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
Applied Physics Letters, Vol. 74, Núm. 9, pp. 1299-1301
1998
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Atomistic modeling of point and extended defects in crystalline materials
Materials Research Society Symposium - Proceedings
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Boron-enhanced-diffusion of boron from ultra-low-energy boron implantation
SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2
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Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion
Materials Science and Engineering A, Vol. 253, Núm. 1-2, pp. 269-274
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Damage, defects and diffusion from ultra-low energy (0-5 keV) ion implantation of silicon
Materials Science in Semiconductor Processing, Vol. 1, Núm. 1, pp. 17-25
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Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model
Journal of Applied Physics, Vol. 83, Núm. 11, pp. 6182-6184
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Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model
Applied Physics Letters, Vol. 73, Núm. 10, pp. 1421-1423
1997
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Atomistic model of transient enhanced diffusion and clustering of boron in silicon
Materials Research Society Symposium - Proceedings
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B diffusion and clustering in ion implanted Si: The role of B cluster precursors
Applied Physics Letters, Vol. 70, Núm. 17, pp. 2285-2287
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Boron-Enhanced-Diffusion of boron: The limiting factor for ultra-shallow junctions
Technical Digest - International Electron Devices Meeting, IEDM
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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
Journal of Applied Physics, Vol. 81, Núm. 9, pp. 6031-6050
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Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials
Applied Physics Letters, Vol. 71, Núm. 21, pp. 3141-3143
1996
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Simulation of cluster evaporation and transient enhanced diffusion in silicon
Applied Physics Letters, Vol. 68, Núm. 17, pp. 2395-2397
1995
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Ion implantation and transient enhanced diffusion
Technical Digest - International Electron Devices Meeting
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Simulation of cluster evaporation and transient enhanced diffusion in silicon
Applied Physics Letters, pp. 2395