Publications by the researcher in collaboration with David J. Eaglesham (15)

1999

  1. Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

    Applied Physics Letters, Vol. 74, Núm. 9, pp. 1299-1301

1998

  1. Atomistic modeling of point and extended defects in crystalline materials

    Materials Research Society Symposium - Proceedings

  2. Boron-enhanced-diffusion of boron from ultra-low-energy boron implantation

    SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2

  3. Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

    Materials Science and Engineering A, Vol. 253, Núm. 1-2, pp. 269-274

  4. Damage, defects and diffusion from ultra-low energy (0-5 keV) ion implantation of silicon

    Materials Science in Semiconductor Processing, Vol. 1, Núm. 1, pp. 17-25

  5. Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model

    Journal of Applied Physics, Vol. 83, Núm. 11, pp. 6182-6184

  6. Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model

    Applied Physics Letters, Vol. 73, Núm. 10, pp. 1421-1423

1997

  1. Atomistic model of transient enhanced diffusion and clustering of boron in silicon

    Materials Research Society Symposium - Proceedings

  2. B diffusion and clustering in ion implanted Si: The role of B cluster precursors

    Applied Physics Letters, Vol. 70, Núm. 17, pp. 2285-2287

  3. Boron-Enhanced-Diffusion of boron: The limiting factor for ultra-shallow junctions

    Technical Digest - International Electron Devices Meeting, IEDM

  4. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

    Journal of Applied Physics, Vol. 81, Núm. 9, pp. 6031-6050

  5. Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials

    Applied Physics Letters, Vol. 71, Núm. 21, pp. 3141-3143

1996

  1. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, Vol. 68, Núm. 17, pp. 2395-2397

1995

  1. Ion implantation and transient enhanced diffusion

    Technical Digest - International Electron Devices Meeting

  2. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, pp. 2395