HECTOR
GARCIA GARCIA
PROFESORES TITULARES DE UNIVERSIDAD
![Foto de M.](/img/nophoto.png)
M.
Ritala
Publicacións nas que colabora con M. Ritala (29)
2021
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Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications
Solid-State Electronics, Vol. 186
2018
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Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices
2017 32nd Conference on Design of Circuits and Integrated Systems, DCIS 2017 - Proceedings
2015
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Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition
Thin Solid Films, Vol. 591, pp. 55-59
2014
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Resistive switching behavior and electrical properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors
Materials Research Society Symposium Proceedings
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Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors
Microelectronics Reliability
2013
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Influence of growth and annealing temperatures on the electrical properties of Nb2O5-based MIM capacitors
Semiconductor Science and Technology, Vol. 28, Núm. 5
2011
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Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
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Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
2009
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Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors
Microelectronic Engineering, Vol. 86, Núm. 7-9, pp. 1689-1691
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Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Electrical characterization of high-k based MIS capacitors using flat-band voltage transients
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 389-393
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Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 416-420
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Study of atomic layer deposited zirconium oxide thin films by using mono-cyclopentadienyl based precursors
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2008
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Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors
Journal of the Electrochemical Society, Vol. 155, Núm. 11
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Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices
Journal of Non-Crystalline Solids, Vol. 354, Núm. 2-9, pp. 393-398
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Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films
Journal of Non-Crystalline Solids, Vol. 354, Núm. 2-9, pp. 404-408
2007
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Electrical characterization of high-k dielectrics by means of flat-band voltage transient recording
Materials Research Society Symposium Proceedings
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Electrical properties of atomic-layer-deposited thin gadolinium oxide high- k gate dielectrics
Journal of the Electrochemical Society, Vol. 154, Núm. 10
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Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics
Microelectronics Reliability, Vol. 47, Núm. 4-5 SPEC. ISS., pp. 653-656