Publicaciones en las que colabora con SALVADOR DUEÑAS CARAZO (49)

2005

  1. A comparative study of atomic layer deposited advanced high-k dielectrics

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

    Thin Solid Films, Vol. 474, Núm. 1-2, pp. 222-229

  3. Electrical characterization of atomic-layer-deposited hafnium silicate for alternative gate dielectric application

    2005 Spanish Conference on Electron Devices, Proceedings

  4. Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition

    Microelectronics Reliability

  5. Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

    2005 Spanish Conference on Electron Devices, Proceedings

  6. On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO 2/Si fabricated by ECR-CVD

    Microelectronics Reliability

2004

  1. Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, Núm. 1, pp. 66-70

  2. Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon

    Journal of Applied Physics, Vol. 96, Núm. 3, pp. 1365-1372

  3. The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon

    Semiconductor Science and Technology, Vol. 19, Núm. 9, pp. 1141-1148

2003

  1. A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378

  2. Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates

    Materials Research Society Symposium - Proceedings

  3. Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates

    MRS Proceedings, Vol. 786

  4. Conductance transient, capacitance-voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films

    Solid-State Electronics

  5. Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290

  6. Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Films

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, Núm. 8, pp. 4978-4981

  7. On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2, Ta2O5 and Nb 2O5-Ta2O5-Nb2O 5 dielectric thin films

    Materials Research Society Symposium - Proceedings

2002

  1. Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures

    Materials Research Society Symposium - Proceedings

  2. Experimental verification of direct tunneling assisted electron capture of disordered-induced gap states in metal-insulator-semiconductor structures

    Japanese Journal of Applied Physics, Part 2: Letters

  3. Radio-frequency impedance analysis of anodic tantalum pentoxide thin films

    Materials Research Society Symposium - Proceedings

2001

  1. C-V, DLTS and conductance transient characterization of SiNx: H/InP interface improved by N2 remote plasma cleaning of the InP surface

    Journal of Materials Science: Materials in Electronics, Vol. 12, Núm. 4-6, pp. 263-267