JUAN JOSE
BARBOLLA SANCHO
Investigador no período 1983-2005
MARÍA HELENA
CASTAN LANASPA
CATEDRATICOS DE UNIVERSIDAD
Publicacións nas que colabora con MARÍA HELENA CASTAN LANASPA (45)
2005
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A comparative study of atomic layer deposited advanced high-k dielectrics
2005 Spanish Conference on Electron Devices, Proceedings
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Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates
Thin Solid Films, Vol. 474, Núm. 1-2, pp. 222-229
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Electrical characterization of atomic-layer-deposited hafnium silicate for alternative gate dielectric application
2005 Spanish Conference on Electron Devices, Proceedings
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Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition
Microelectronics Reliability
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Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
2005 Spanish Conference on Electron Devices, Proceedings
2004
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Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, Núm. 1, pp. 66-70
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Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon
Journal of Applied Physics, Vol. 96, Núm. 3, pp. 1365-1372
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The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon
Semiconductor Science and Technology, Vol. 19, Núm. 9, pp. 1141-1148
2003
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A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378
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Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates
Materials Research Society Symposium - Proceedings
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Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates
MRS Proceedings, Vol. 786
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Conductance transient, capacitance-voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films
Solid-State Electronics
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Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films
Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290
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Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Films
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, Núm. 8, pp. 4978-4981
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On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2, Ta2O5 and Nb 2O5-Ta2O5-Nb2O 5 dielectric thin films
Materials Research Society Symposium - Proceedings
2002
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Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures
Materials Research Society Symposium - Proceedings
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Experimental verification of direct tunneling assisted electron capture of disordered-induced gap states in metal-insulator-semiconductor structures
Japanese Journal of Applied Physics, Part 2: Letters
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Radio-frequency impedance analysis of anodic tantalum pentoxide thin films
Materials Research Society Symposium - Proceedings
2001
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C-V, DLTS and conductance transient characterization of SiNx: H/InP interface improved by N2 remote plasma cleaning of the InP surface
Journal of Materials Science: Materials in Electronics, Vol. 12, Núm. 4-6, pp. 263-267
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DLTS and conductance transient investigation on defects in anodic tantalum pentoxide thin films
Journal of Materials Science: Materials in Electronics, Vol. 12, Núm. 4-6, pp. 317-321