PEDRO
CASTRILLO ROMON
Researcher in the period 1993-2013
MARTIN
JARAIZ MALDONADO
PROFESOR EMERITO
Publications by the researcher in collaboration with MARTIN JARAIZ MALDONADO (30)
2011
2010
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Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures
Thin Solid Films, Vol. 518, Núm. 9, pp. 2448-2453
2008
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Comprehensive model of damage accumulation in silicon
Journal of Applied Physics, Vol. 103, Núm. 1
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From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon
Solid-State Electronics, Vol. 52, Núm. 9, pp. 1430-1436
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The role of implanter parameters on implant damage generation: An atomistic simulation study
AIP Conference Proceedings
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The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 154-155, Núm. 1-3, pp. 260-263
2007
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Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D
ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
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Atomistic modeling of defect diffusion in SiGe
2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
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Current capabilities and future prospects of atomistic process simulation
Technical Digest - International Electron Devices Meeting, IEDM
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From point defects to dislocation loops: A comprehensive TCAD model for self-interstitial defects in silicon
ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
2006
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Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth
Materials Research Society Symposium Proceedings
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Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 253, Núm. 1-2, pp. 63-67
2005
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Bimodal distribution of damage morphology generated by ion implantation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Comprehensive modeling of ion-implant amorphization in silicon
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators
Journal of Applied Physics, Vol. 98, Núm. 5
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Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population
Journal of Applied Physics, Vol. 98, Núm. 4
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Ion-implant simulations: The effect of defect spatial correlation on damage accumulation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach
Applied Physics Letters, Vol. 86, Núm. 25, pp. 1-3
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Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon
Physical Review B - Condensed Matter and Materials Physics, Vol. 72, Núm. 3