PEDRO
CASTRILLO ROMON
Researcher in the period 1993-2013
Publications (62) PEDRO CASTRILLO ROMON publications
2016
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Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2014
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Atomistic modelling and simulation of arsenic diffusion including mobile arsenic clusters
Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 1, pp. 147-151
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Modeling of boron diffusion in silicon-germanium alloys using Kinetic Monte Carlo
Solid-State Electronics, Vol. 93, pp. 61-65
2013
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Effective electrical resistance due to current-induced heat flow in thermoelectric generators
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
2012
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Process modeling of chemical and stress effects in SiGe
AIP Conference Proceedings
2011
2010
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Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures
Thin Solid Films, Vol. 518, Núm. 9, pp. 2448-2453
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Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency
Physical Review B - Condensed Matter and Materials Physics, Vol. 81, Núm. 3
2008
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Comprehensive model of damage accumulation in silicon
Journal of Applied Physics, Vol. 103, Núm. 1
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From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon
Solid-State Electronics, Vol. 52, Núm. 9, pp. 1430-1436
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The role of implanter parameters on implant damage generation: An atomistic simulation study
AIP Conference Proceedings
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The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 154-155, Núm. 1-3, pp. 260-263
2007
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Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D
ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
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Atomistic modeling of defect diffusion in SiGe
2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
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Current capabilities and future prospects of atomistic process simulation
Technical Digest - International Electron Devices Meeting, IEDM
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From point defects to dislocation loops: A comprehensive TCAD model for self-interstitial defects in silicon
ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
2006
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Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth
Materials Research Society Symposium Proceedings
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Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 253, Núm. 1-2, pp. 63-67
2005
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Bimodal distribution of damage morphology generated by ion implantation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Comprehensive modeling of ion-implant amorphization in silicon
Materials Science and Engineering B: Solid-State Materials for Advanced Technology